Very low threshold operation of 1.52 μm GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD

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Abstract
1.52 μm GaInAsP/InP DFB laser diodes with a buried ridge structure were fabricated entirely by MOCVD, with a second-order corrugation on the GaInAsP guiding layer. The 5 mA minimum threshold current achieved is believed to be the lowest yet reported for DFB lasers. Single longitudinalmode operation with a side-mode suppression ratio greater than 35 dB was obtained from 20°C (up to 16 mW) to 90°C (up to 3 mW).