Shape of the GaInAs/InP Multiquantum Well Potential Observed by Scanning Tunneling Microscopy
- 1 September 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (9A) , L1586-1587
- https://doi.org/10.1143/jjap.30.l1586
Abstract
Under an ultrahigh vacuum (UHV) environment, a cross-sectional observation of a non-doped n-Ga0.47In0.53As/InP multiquantum well (MQW) structure was performed using scanning tunneling microscopy (STM). The STM image of the non-doped MQW structure was compared with the STM image of a highly-doped n-GaInAs/InP MQW structure. As a result, it has become clear that the STM images of the MQW structures reflect the shape of the MQW potential which varies with the doping concentration.Keywords
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