Epitaxial crystallisation of tin implanted silicon
- 1 February 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 37-38, 387-390
- https://doi.org/10.1016/0168-583x(89)90209-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Direct observation of laser-induced solid-phase epitaxial crystallization by time-resolved optical reflectivityApplied Physics Letters, 1980
- Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous SiJournal of Applied Physics, 1978
- An electron microscopy study of defect structures in recrystallized amorphous layers of self-ion-irradiated ?111? siliconPhilosophical Magazine A, 1978