SiKαX-Ray Spectrum Produced by 30-MeV Oxygen Bombardment

$K\alpha$ x-rays of Si were produced by 30-MeV oxygen bombardment on a Si wafer. Nine $K\alpha$ lines are observed with an energy resolution of 2.5 eV at energies of 1739.78 ($K{\alpha }_{1,2}$), 1750.8 ± 0.5 ($K{\alpha }_3$), 1753.1 ± 0.6 ($K{\alpha }_4$), 1762.6 ± 0.5 ($K{\alpha }_5$), 1766.4 ± 0.6 ($K{\alpha }_6$), 1775.3 ± 0.6, 1778.8 ± 0.5, 1794.2 ± 0.6, and 1809.7 ± 0.8 eV. The intensity pattern is very nearly symmetric and the envelope approximately Gaussian. The energies of these lines are found to agree with Hartree-Fock-Slater calculated energies for $K\alpha$ transitions from Si atoms with initial configurations ${\mathrm{}\left(1s\right)\mathrm{}}^{-1\mathrm{}}{\mathrm{}\left(2p\right)\mathrm{}}^{-n}$ for $n=0, 1, 2, 3, 4, \mathrm{and} 5$.