Influence of proton implantation on the properties of CuInSe2single crystals (I). Ion channeling study of lattice damage

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Abstract
The lattice damage of p‐type CuInSe2single crystals implanted with 10 keV protons in the fluence range from 2.5 · 1014to 8 · 1015cm−2was investigated using the Rutherford backscattering/channeling technique. At proton fluences up to about 2 · 1015cm−2radiation annealing of the defects is observed which is ascribed to very high defect concentrations in the unimplanted samples. At higher fluences radiation damage occurs but the concentration of radiation induced defects ramains low. There are indications that selenium interstitials or defect complexes with selenium interstitials involved are stable defects at room temperature.