The effects of preadsorbed oxygen contaminant on the adsorption of Al on Si (111)

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Abstract
The effects of preadsorbed oxygen on the ordering of aluminum atoms deposited upon the (111) surface of silicon single crystals were investigated by low-energy electron diffraction and Auger electron spectroscopy. The extent of ordering of the Al atoms and the orientation of the adsorbate relative to the Si lattice were determined as functions of temperature from 200 to 1000 °C. Deposition of Al upon clean Si (111) at 25 °C produced a partially ordered Al (111) adlayer, whereas deposition upon an oxygen-contaminated surface resulted in the formation of a completely disordered Al layer. Upon subsequent heating to higher temperatures, the adlayer irreversibly converted to an epitaxial (111) films. The temperature for epitaxy was higher for increased oxygen preexposure. The results indicated that this conversion was not caused by oxygen desorption or the formation of an oxide phase.

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