Spin energetics in a GaAs quantum well: Asymmetric spin-flip Raman scattering
- 15 January 1999
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 59 (4) , R2506-R2509
- https://doi.org/10.1103/physrevb.59.r2506
Abstract
We demonstrate an asymmetric dependence of the spin-flip electronic Raman spectrum from a two-dimensional electron gas on the direction of circular polarization of the photons, resulting from an interference of light scattered from longitudinal and transverse spin-density fluctuations. By exploiting these selection rules, we are able to determine experimentally that the sign of the band-structure parameter which describes the bulk conduction-band spin splitting in zinc-blende semiconductors, is negative for GaAs.
Keywords
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