Spin energetics in a GaAs quantum well: Asymmetric spin-flip Raman scattering

Abstract
We demonstrate an asymmetric dependence of the spin-flip electronic Raman spectrum from a two-dimensional electron gas on the direction of circular polarization of the photons, resulting from an interference of light scattered from longitudinal and transverse spin-density fluctuations. By exploiting these selection rules, we are able to determine experimentally that the sign of the band-structure parameter a42, which describes the bulk k3 conduction-band spin splitting in zinc-blende semiconductors, is negative for GaAs.