Tight-Binding Initialization for Generating High-Quality Initial Wave Functions: Application to Defects and Impurities in GaN
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Atomic geometry and electronic structure of native defects in GaNPhysical Review B, 1994
- Simultaneous calculation of the equilibrium atomic structure and its electronic ground state using density-functional theoryComputer Physics Communications, 1994
- Finite-difference-pseudopotential method: Electronic structure calculations without a basisPhysical Review Letters, 1994
- Efficient pseudopotentials for plane-wave calculationsPhysical Review B, 1991
- Nonlinear ionic pseudopotentials in spin-density-functional calculationsPhysical Review B, 1982
- Momentum-space formalism for the total energy of solidsJournal of Physics C: Solid State Physics, 1979
- Self-Consistent Equations Including Exchange and Correlation EffectsPhysical Review B, 1965