Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
- 1 May 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 18 (5) , 209-211
- https://doi.org/10.1109/55.568766
Abstract
Quantum-mechanical modeling of electron tunneling current from the quantized inversion layer of ultra-thin-oxide (<40 /spl Aring/) nMOSFET's is presented, together with experimental verification. An accurate determination of the physical oxide thickness is achieved by fitting experimentally measured capacitance-versus-voltage curves to quantum-mechanically simulated capacitance-versus-voltage results. The lifetimes of quasibound states and the direct tunneling current are calculated using a transverse-resonant method. These results are used to project an oxide scaling limit of 20 /spl Aring/ before the chip standby power becomes excessive due to tunneling currents,.Keywords
This publication has 10 references indexed in Scilit:
- Tunneling gate oxide approach to ultra-high current drive in small geometry MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Zur berechnung des tunnelstroms durch eine trapezförmige potentialstufePublished by Elsevier ,2002
- CMOS scaling into the 21st century: 0.1 µm and beyondIBM Journal of Research and Development, 1995
- Quantum-mechanical modeling of accumulation layers in MOS structureIEEE Transactions on Electron Devices, 1992
- On tunneling in metal-oxide-silicon structuresJournal of Applied Physics, 1982
- Tunneling in thin MOS structuresJournal of Vacuum Science and Technology, 1974
- Design of ion-implanted MOSFET's with very small physical dimensionsIEEE Journal of Solid-State Circuits, 1974
- Tunneling through thin MOS structures: Dependence on energy (E-κ)Applied Physics Letters, 1974
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Fowler-Nordheim Tunneling into Thermally Grown SiO2Journal of Applied Physics, 1969