The formation of 360° domain walls in magnetic tunnel junction elements
- 7 February 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (6) , 754-756
- https://doi.org/10.1063/1.125884
Abstract
The formation of 360° domain walls has been observed in exchange-biased magnetic tunnel junction elements using Lorentztransmission electron microscopy. These domain walls occur under certain circumstances and remain stable up to a high external field (∼150 Oe) compared to the value observed to achieve the antiparallel state of the free- and pinned-layer magnetizations (∼20 Oe). They have been found to play an important role during reversal to the parallel magnetization state, inducing a much lower switching field and a very different reversal mechanism.Keywords
This publication has 7 references indexed in Scilit:
- Magnetization vortices and anomalous switching in patterned NiFeCo submicron arraysApplied Physics Letters, 1999
- Effect of stray-field coupling on active spin-valve elements analyzed by Lorentz transmission electron microscopyJournal of Applied Physics, 1999
- Magnetic interactions within patterned cobalt nanostructures using off-axis electron holographyJournal of Applied Physics, 1998
- Direct observation of magnetization reversal processes in micron-sized elements of spin-valve materialJournal of Applied Physics, 1998
- Switching field variation in patterned submicron magnetic film elementsJournal of Applied Physics, 1997
- Domains and hysteresis in patterned soft magnetic elementsIEEE Transactions on Magnetics, 1997
- Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel JunctionsPhysical Review Letters, 1995