Determination of band-gap discontinuity in AlGaAs/GaAs system by quantum oscillations of photoluminescence intensity
- 1 August 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 174 (1-3) , 307-311
- https://doi.org/10.1016/0039-6028(86)90426-7
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Electrical characterization of GaAs/AlGaAs semiconductor-insulator-semiconductor capacitors and application to the measurement of the GaAs/AlGaAs band-gap discontinuityJournal of Applied Physics, 1985
- Parabolic quantum wells with thesystemPhysical Review B, 1984
- Measurement of isotype heterojunction barriers by C-V profilingApplied Physics Letters, 1980
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974