Terracing of (100) Si with one mask and one etching step using misaligned V-grooves
- 1 March 1996
- journal article
- Published by IOP Publishing in Journal of Micromechanics and Microengineering
- Vol. 6 (1) , 39-41
- https://doi.org/10.1088/0960-1317/6/1/006
Abstract
By using narrowly spaced V-grooves slightly misaligned to the [110]-direction, multilevel terracing can be obtained using one mask and one wet etching step only. Etching in the vertical direction is locally delayed until the ridges between the V-grooves are fully underetched. The method is demonstrated in KOH and TMAH (tetramethyl ammonium hydroxide) etchants and the dependence of angular misalignment on height and surface smoothness are investigated.Keywords
This publication has 1 reference indexed in Scilit:
- Anisotropic Etching of Crystalline Silicon in Alkaline Solutions: I . Orientation Dependence and Behavior of Passivation LayersJournal of the Electrochemical Society, 1990