Chapter 2 The Voltage–Current Characteristic of Metal–Semiconductor Contacts
- 1 January 1971
- book chapter
- Published by Elsevier
- Vol. 7, 75-146
- https://doi.org/10.1016/s0080-8784(08)63007-0
Abstract
No abstract availableThis publication has 94 references indexed in Scilit:
- Electric field dependence of GaAs Schottky barriersSolid-State Electronics, 1968
- Thermionic emission in AuGaAs Schottky barriersSolid-State Electronics, 1968
- Differential resistance peaks of Schottky barrier diodesSolid-State Electronics, 1967
- Theory of Tunneling Across Semiconductor JunctionsPhysical Review B, 1965
- Electron Tunneling with Diffuse Boundary ConditionsPhysical Review B, 1964
- Zur Theorie der Gleichrichtung am Kontakt Metall-HalbleiterThe European Physical Journal A, 1954
- Zur Theorie des Germaniumgleichrichters und des TransistorsThe European Physical Journal A, 1953
- Contributions to the theory of heterogeneous barrier layer rectifiersProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1951
- The theory of direct-current characteristics of rectifiersProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1951
- A note on the theory of rectificationProceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 1932