Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy
- 1 January 1993
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 63 (1-4) , 106-110
- https://doi.org/10.1016/0169-4332(93)90072-j
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Arsenic passivation of MBE grown GaAs(100): structural and electronic properties of the decapped surfacesSurface Science, 1992
- Optical spectroscopy of (001) GaAs and AlAs under molecular-beam epitaxy growth conditionsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Reconstruction and defect structure of vicinal GaAs(001) and AlxGa1−xAs(001) surfaces during MBE growthSurface Science, 1990
- Surface dielectric anisotropies and phase diagrams of (001) GaAsJournal of Vacuum Science & Technology B, 1990
- Surface reconstructions of GaAs(100) observed by scanning tunneling microscopyPhysical Review B, 1990
- Measurements of above-bandgap optical anisotropies in the (0 0 1) surface of GaAsSolid State Communications, 1987
- Molecular-beam-epitaxy GaAs regrowth with clean interfaces by arsenic passivationJournal of Applied Physics, 1985
- Protection of molecular beam epitaxy grown AlxGa1−xAs epilayers during ambient transferJournal of Vacuum Science and Technology, 1981