Hole transport in gallium antimonide

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Abstract
The Hall coefficients R, Seebeck coefficients S, and electrical resistivities ρ of two undoped samples of p-type GaSb were measured over the temperature ranges 20–300 K for R and ρ and 40–300 K for S. The theoretical transport coefficients R, S, and ρ were fitted in a self-consistent way to the experimental data by adjusting the material parameters. The temperature range of the analysis (80–300 K) was found to be in the transition region between a multiellipsoidal valence band structure at low temperatures and a warped sphere structure at higher temperatures. The value deduced for the heavy hole conductivity effective mass was found to be about one third of the heavy hole density-of-states effective mass md1≊0.9 m0 which was used from the theory of Kolodziejczak.