Contribution des phonos LA et TA à l'absorption intervallée dans GaAs
- 16 February 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 15 (2) , K127-K131
- https://doi.org/10.1002/pssa.2210150257
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Absorption optique de l'arseniure de gallium de type n entre 0,6 et 1,3 eVPhysica Status Solidi (a), 1971
- Lattice dynamics of III–V compoundsCanadian Journal of Physics, 1969
- Optical Absorption due to Inter-Conduction-Minimum Transitions in Gallium ArsenidePhysical Review B, 1968
- Free-Carrier Infrared Absorption in III-V Semiconductors IV. Inter-Conduction Band TransitionsJournal of the Physics Society Japan, 1964
- Free-Carrier Infrared Absorption in III-V Semiconductors III. GaAs, InP, GaP and GaSbJournal of the Physics Society Japan, 1964
- Electron scattering in InSbJournal of Physics and Chemistry of Solids, 1957