Physical mechanism of the “reverse short-channel effect” in MOS transistors
- 30 June 1991
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 34 (6) , 605-608
- https://doi.org/10.1016/0038-1101(91)90133-j
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Reverse short-channel effects on threshold voltage in submicrometer salicide devicesIEEE Electron Device Letters, 1989
- An analysis of the threshold voltage for short-channel IGFET'sSolid-State Electronics, 1973