80-100 GHz broadband amplifier MMIC utilizing CPWs and quarter micron InP-based HEMTs
- 22 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Active circulator MMIC in CPW technology using quarter micron InAlAs/InGaAs/InP HFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 60- and 77-GHz monolithic amplifiers utilizing InP-based HEMTs and coplanar waveguidesMicrowave and Optical Technology Letters, 1996
- SCFL static frequency divider using InAIAs/InGaAs/InP HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1995
- W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/IEEE Microwave and Guided Wave Letters, 1995
- Quasi-TEM description of MMIC coplanar lines including conductor-loss effectsIEEE Transactions on Microwave Theory and Techniques, 1993
- 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistorsIEEE Transactions on Electron Devices, 1992