The use of refractory metal and electron-beam sintering to reduce contact resistance for VLSI

1 November 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 30 (11) , 1542-1550
https://doi.org/10.1109/t-ed.1983.21335

Abstract

Low contact resistance for metal on silicon is particularly important for VLSI where contact dimensions become ≤1 µm. This paper reports on e-beam sintering of refractory metal contacts on implanted n+- and p+-silicon layers. With this technique, we have obtained contact resistivities as low as 1.5 × 10-7Ω. cm2and 1.2 × 10-7Ω . cm2for n+and p+contacts, respectively. These values are the lowest contact resistivities which have been achieved experimentally to date. We found no measurable metal-silicon interdiffusion when e-beam sintering was used. Electron-beam-induced MOS damage, including neutral traps, can be removed by a forming gas anneal.

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