Low threshold operation of 1.55 μm GaInAsP/InP DFB-BH LDs entirely grown by MOVPE on InP gratings
- 4 February 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (3) , 147-149
- https://doi.org/10.1049/el:19880098
Abstract
1.55 μm GaInAsP/InP DFB-BH LDs on corrugated InP substrates were fabricated by only two-stage MOVPE, including burying layer growth. The 9 mA minimum threshold current was achieved with both facets cleaved, which the authors believe is the lowest among MOVPE grown DFB LDs with InP grating. Up to 20mW maximum output power and 0.21 W/A differential quantum efficiency were also attained under single longitudinal mode operation.Keywords
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