Magnetic and magnetotransport properties of new III-V diluted magnetic semiconductors: GaMnAs

We have studied magnetic and magnetotransport properties of novel III-V diluted magnetic semiconductors, $({\mathrm{Ga}}_{\text{1−x}}{\mathrm{Mn}}_x)\mathrm{As}$ . The GaMnAs thin films were grown on GaAs(001) substrates by low temperature molecular beam epitaxy. We present magnetoresistance, extraordinary Hall effect, and $\mathrm{M–H}$ characteristics of two $({\mathrm{Ga}}_{\text{1−x}}{\mathrm{Mn}}_x)\mathrm{As}$ samples having different Mn content x.