Low Phase Noise X/Ku-Band VCO

1 January 1987

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 2, 587-590
https://doi.org/10.1109/mwsym.1987.1132478

Abstract

A balanced, thin-film VCO utilizing silicon bipolar transistors and hyper-abrupt varactor diodes has yielded 40% tuning bandwidth while demonstrating excellent frequency stability. Key features of this design are: High RF output power, linear tuning characteristics, excellent sub-harmonic rejection, and low single sideband phase noise. At an operating frequency of 11.5 GHz, single sideband phase noise of -104 dBc/Hz at 100 KHz offset has been obtained. An X-band VCO subsystem designed for missile LO applications utilizing the developed oscillator is also presented.

Keywords

PHASE NOISE
VOLTAGE-CONTROLLED OSCILLATORS
TUNING
FREQUENCY
SEMICONDUCTOR THIN FILMS
THIN FILM TRANSISTORS
SILICON
BIPOLAR TRANSISTORS
VARACTORS
DIODES

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