Complementary GaAs SIS FET inverter using selective crystal regrowth technique by MBE

1 March 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 7 (3) , 182-184
https://doi.org/10.1109/EDL.1986.26337

Abstract

A first complementary GaAs semiconductor-insulator-semiconductor (SIS) FET inverter has been fabricated by constructing n-channel and p-channel GaAs SIS FET's on a single LEC GaAs substrate using MBE selective crystal regrowth technique. The fabricated inverter shows an inverter operation as a really low-power complementary inverter.

Keywords

GALLIUM ARSENIDE
FETS
INVERTERS
SUBSTRATES
THRESHOLD VOLTAGE
SPUTTER ETCHING
ENERGY CONSUMPTION
INSULATION
TEMPERATURE MEASUREMENT
TEMPERATURE DISTRIBUTION

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