Process-Based Three-Dimensional Capacitance Simulation -- TRICEPS
- 1 January 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 5 (1) , 215-220
- https://doi.org/10.1109/tcad.1986.1270189
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Semiconductor device simulationIEEE Transactions on Electron Devices, 1983
- Resistance Extraction from Mask Layout DataIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1983
- Theoretical, practical and analogical limits in ULSIPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983
- Coupling capacitances for two-dimensional wiresIEEE Electron Device Letters, 1981
- A two-dimensional mathematical model of the insulated-gate field-effect transistorSolid-State Electronics, 1973