Electron irradiation damage in silicon containing carbon and oxygen
- 1 April 1970
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 31 (4) , 739-751
- https://doi.org/10.1016/0022-3697(70)90207-6
Abstract
No abstract availableThis publication has 31 references indexed in Scilit:
- INFRARED ABSORPTION BANDS IN CARBON- AND OXYGEN-DOPED SILICONApplied Physics Letters, 1968
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Arsenic- and Antimony-Vacancy PairsPhysical Review B, 1968
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy PairPhysical Review B, 1967
- 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the DivacancyPhysical Review B, 1966
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the DivacancyPhysical Review B, 1965
- Production of Divacancies and Vacancies by Electron Irradiation of SiliconPhysical Review B, 1965
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-CenterPhysical Review B, 1964
- A new paramagnetic center in electron irradiated siliconJournal of Physics and Chemistry of Solids, 1963
- Defects in Irradiated Silicon. II. Infrared Absorption of the Si-CenterPhysical Review B, 1961
- Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-CenterPhysical Review B, 1961