Evaluation of doping profiles from capacitance measurements
- 1 April 1968
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (4) , 397-406
- https://doi.org/10.1016/0038-1101(68)90020-8
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The capacitance of p-n junctionsSolid-State Electronics, 1967
- Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier SystemJournal of Applied Physics, 1963
- Impurity Distribution in Epitaxial Silicon FilmsJournal of the Electrochemical Society, 1962
- The Charge and Potential Distributions at the Zinc Oxide ElectrodeBell System Technical Journal, 1960
- Ion Drift in an n-p JunctionJournal of Applied Physics, 1960