Electrical properties of polycrystalline silicon layers under solar illumination
- 15 November 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (10) , 3651-3655
- https://doi.org/10.1063/1.337571
Abstract
A model of recombination of carriers at the grain boundaries in polycrystalline silicon layers, taking into account the dynamics of capture and emission of carriers at the grain boundaries trapping states, is presented. Based on this model we investigate the electrical properties of polycrystalline silicon as a function of grain size under solar illumination. Comparison of our theoretical results with experimental results indicates that there is satisfactory agreement.This publication has 19 references indexed in Scilit:
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