Effect of Surface Topography on the Relaxation Behavior of Thin Polysulfone Coatings on Pretreated Aluminum Substrates

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Abstract
Thin polysulfone (PSF) coatings on pretreated aluminum surfaces were characterized utilizing dielectric thermal analysis (DETA) to detect changes in the molecular motions and structural transitions in the PSF-Al interphase. The XPS results show that the interfacial chemistry between the PSF and the Al oxide surface was the same on both degreased and phosphoric acid anodized (PAA) Al surfaces. The order of the loss peak temperature of the PSF is, PSF coating on porous Al>PSF coating on smooth Al>neat PSF film. The activation energy of relaxation is also lower for neat PSF when compared with the thin film cast onto a smooth Al or a porous PAA Al substrate. The SEM photomicrographs revealed that the PSF uniformly coated the degreased substrate, whereas PSF filled the porous oxide on PAA Al surface and resulted in whisker-like structures.

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