Annealing of intimate Ag, Al, and Au–GaAs Schottky barriers

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Abstract
Using valence-band and core-level photoemission spectroscopy (PES) and electrical device measurements, the effects of annealing Ag, Al, and Au on n-type (110)GaAs Schottky diodes fabricated in ultrahigh vacuum have been studied. PES was used to monitor the annealing-induced changes in the interface Fermi level position and the chemical nature of the metal–semiconductor interface for submonolayer and several monolayer coverages. Barrier height determinations were also performed using current–voltage (I–V) and capacitance–voltage (C–V) device measurements on annealed thick metal film metal–semiconductor junctions. The results of this study show that the annealing-induced microscopic changes in the electronic and chemical structure of the metal–semiconductor interface can be strongly correlated with the macroscopic changes in the electrical properties of thick film metal–semiconductor Schottky diodes.

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