Determination of back interface state distribution in fully depleted SOI MOSFETs
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Modes of operation and radiation sensitivity of ultrathin SOI transistorsIEEE Transactions on Electron Devices, 1990
- Subthreshold slope in thin-film SOI MOSFETsIEEE Transactions on Electron Devices, 1990
- Short-channel effect in fully depleted SOI MOSFETsIEEE Transactions on Electron Devices, 1989
- Observation of mobility enhancement in ultrathin SOI MOSFETsElectronics Letters, 1988
- Reduction of kink effect in thin-film SOI MOSFETsIEEE Electron Device Letters, 1988
- Performance Advantages of Submicron Silicon-On-Insulator Devices for ULSIMRS Proceedings, 1987
- Subthreshold slope of thin-film SOI MOSFET'sIEEE Electron Device Letters, 1986
- Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET'sIEEE Transactions on Electron Devices, 1983