Continuous wave visible InGaP/InGaAlP quantum well surface emitting laser diodes

22 July 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (15) , 1314-1316
https://doi.org/10.1049/el:19930881

Abstract

Vertical cavity top surface emitting lasers in the 0.66 μm visible spectral region were fabricated by the metal-organic chemical vapour deposition technique. The continuous wave threshold currents I_th are 3.9 and 4.6 mA at −75 and −25°C, respectively, for 15μm diameter devices. The lasers can also be operated at room temperature, but only in a pulsed mode with an I_th of 12 mA at 25°C.

Keywords

CONTINUOUS WAVE THRESHOLD CURRENTS
LASER DIODES
CW TYPE
METAL-ORGANIC CHEMICAL VAPOUR DEPOSITION
MOCVD
VERTICAL CAVITY
SURFACE EMITTING
15 MICRON
-75 TO 25 DEGC
QUANTUM WELL
3.9 TO 12 MA
INGAP-INGAALP
VISIBLE SPECTRAL REGION

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