3.5-watt AlGaN/GaN HEMTs and amplifiers at 35 GHz
- 22 March 2004
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 23.5.1-23.5.3
- https://doi.org/10.1109/iedm.2003.1269349
Abstract
Sub-0.2-/spl mu/m AlGaN/GaN HEMTs were successfully scaled to 1.05 mm gate-width with minor gain reduction. On-chip single-stage amplifiers exhibited gains of 8 dB and 7.5 dB, as well as output powers of 3.6 W and 3.5 W, at 30 GHz and 35 GHz, respectively. This multi-watt output power at millimeter-wave frequencies well exceeded previous state-of-the-art for a GaN HEMT and is comparable to that from 6-7 times larger GaAs-based devices.Keywords
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