Numerical simulation of far infrared emission under population inversion of hole sub-bands
- 1 January 1991
- journal article
- research article
- Published by Springer Nature in Optical and Quantum Electronics
- Vol. 23 (2) , S177-S193
- https://doi.org/10.1007/bf00619764
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Remarkable effects of uniaxial stress on the far-infrared laser emission inp-type GePhysical Review B, 1988
- Mode structure of the p-germanium far-infrared laser with and without external mirrors: Single line operationApplied Physics Letters, 1988
- Far-infrared laser oscillation in p-GeSolid State Communications, 1986
- Far Infrared Absorption by Hot Holes in p‐Ge under E ⟂ B FieldsPhysica Status Solidi (b), 1985
- The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materialsReviews of Modern Physics, 1983
- Population inversion due to separate shift and heating of light and heavy holes in semiconductorsPhysics Letters A, 1983
- Dispersion relations for hot electronsJournal of Applied Physics, 1982
- The valence bandstructure and the hole mobility in siliconCanadian Journal of Physics, 1977
- Semiconductor PhysicsPublished by Springer Nature ,1973
- Energy band structure in p-type germanium and siliconJournal of Physics and Chemistry of Solids, 1956