Subpicosecond spectral gain dynamics in AlGaAs laser diodes
- 18 August 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (17) , 1102-1104
- https://doi.org/10.1049/el:19880748
Abstract
We present results of tunable probe measurements of ultrafast dynamics in AIGaAs diode laser amplifiers. The use of gated upconversion has allowed the observation of subpicosecond gain depletion and recovery with pump-probe separations of up to 30 nm. The data show no sign of spectral hole burning and are consistent with the mechanism of dynamic carrier heating.Keywords
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