Infrared techniques for semiconductor characterization
- 1 June 1970
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 10 (2) , 125-139
- https://doi.org/10.1016/0020-0891(70)90008-4
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Mobility and Infrared Absorption in n-Type Gallium ArsenideJournal of Applied Physics, 1969
- A Theoretical Model of the Three-Point Probe Breakdown TechniqueJournal of the Electrochemical Society, 1968
- Detection of resistivity variation in a semiconductor pellet with an electron beamMicroelectronics Reliability, 1967
- Resistivity Inhomogeneities in Silicon CrystalsJournal of the Electrochemical Society, 1967
- A Spreading Resistance Technique for Resistivity Measurements on SiliconJournal of the Electrochemical Society, 1966
- Free-Carrier Infrared Absorption in III-V Semiconductors III. GaAs, InP, GaP and GaSbJournal of the Physics Society Japan, 1964
- A Nondestructive Measurement of Carrier Concentration in Heavily Doped Semiconducting Materials and Its Application to Thin Surface LayersJournal of Applied Physics, 1963
- Lattice Absorption in Gallium ArsenideJournal of Applied Physics, 1961
- Infrared Absorption and Electron Effective Mass in-Type Gallium ArsenidePhysical Review B, 1959
- Infrared lattice vibration studies of polar character in compound semiconductorsJournal of Physics and Chemistry of Solids, 1959