MOVPE growth and characterization of doped CdxHg1-xTe structures

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Abstract
This paper describes work carried out towards achieving extrinsically doped CdxHg1-xTe (CMT) heterostructures grown with stable dopants and sharp junctions. Both acceptor and donor doping of CMT has been achieved in our MOVPE growth reactor using the interdiffused multilayer process at approximately 400 degrees C with diethyltellurium (DET) as the tellurium alkyl source. The two dopants used were arsenic, introduced as AsH3, and iodine, as vapour from the solid element. The donor doping range has been extended by the use of a concentrically arranged double-injection-tube system which reduced the pre-reaction between the cadmium alkyl and the iodine vapour. Investigations have been carried out into the growth of various double-layer structures which incorporate either a single dopant transition or a double transition, as in a fully doped structure.