Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistor

3 December 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (25) , 2354-2356
https://doi.org/10.1049/el:19921517

Abstract

The first characterisation of the low frequency noise performances of nonpassivated selfaligned GaInP/GaAs heterojunction bipolar transistors (HBT) is reported. The observed low frequency noise is smaller than for more classical GaAlAs/GaAs HBTs and is attributed to a reduced trap concentration at the GaInP/GaAs heterointerface.

Keywords

REDUCED TRAP CONCENTRATION
1/F NOISE
NONPASSIVATED SELFALIGNED DEVICE
HBT
LF NOISE PERFORMANCE
HETEROJUNCTION BIPOLAR TRANSISTOR
LOW FREQUENCY NOISE
CHARACTERISATION
GAINP-GAAS

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