A Model of Silicon Carbide Chemical Vapor Deposition

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Abstract
We present a model describing the interacting gas phase and surface chemistry present during the steady‐state chemical vapor deposition (CVD) of silicon carbide . In this work, we treat the case of steady‐state deposition of from silane and propane mixtures in hydrogen carrier gas at one atmosphere pressure. Epitaxial deposition is assumed to occur on a pre‐existing epitaxial silicon carbide crystal. Pyrolysis of and is modeled by 83 elementary gas‐phase reactions. A set of 36 reactions of gas‐phase species with the surface is used to simulate the deposition process. Rates for the gas/surface reactions were obtained from experimental measurements of sticking coefficients in the literature and theoretical estimates. Our results represent the first simulation of a silicon carbide deposition process that includes detailed descriptions of both the gas phase and surface reactions. The chemical reaction mechanism is also combined with a model of a rotating disk reactor (RDR), which is a convenient way to study the interaction of chemical reactions with fluid mechanics. Transport of species from the gas to the surface is accounted for using multicomponent transport properties. Predictions of deposition rates as a function of susceptor temperature, disk rotation rate, and reactant partial pressure are presented. In addition, velocity, temperature, and concentration profiles normal to the heated disk for 41 gas‐phase species are determined using reactor conditions typical of epitaxial silicon carbide deposition on silicon substrates.

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