Effect of Ca2PbO4 additions on the formation of the 110 K phase in Bi-Pb-Sr-Ca-Cu-O superconducting ceramics

11 February 1991

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 58 (6) , 637-639
https://doi.org/10.1063/1.104553

Abstract

The growth of the Bi2Sr2Ca2Cu3Ox phase in the high Tc superconducting Bi-Pb-Sr-Ca-Cu-O system through reacting Bi2Sr2CaCu2Ox with Ca- or Cu-rich intermediate phases, Ca2CuO3, CuO, and Ca2PbO4, has been studied. X-ray diffraction and electrical and diamagnetic analyses revealed that the interaction and interdiffusion of these intermediate phase led to the formation of a high percentage of the 2223 phase and a sharp single-step superconducting transition at Tc(R = 0) = 108 K. Also, Ca2PbO4 proved essential for accelerating the growth rate of the 110 K phase from the 85 K phase.

Keywords

This publication has 16 references indexed in Scilit:

Accelerated formation of 110 K high T c phase in the Ca- and Cu-rich Bi-Pb-Sr-Ca-Cu-O system
Applied Physics Letters, 1990
Composition dependence of high T c phase formation in Pb-doped Bi-Sr-Ca-Cu-O thin films
Applied Physics Letters, 1989
Crystallization of metal-oxide glasses in Bi-Sr-Ca-Cu-O systems
Physical Review B, 1989
Single High-T_c Phase Region of the Bi-Pb-Sr-Ca-Cu-O System
Japanese Journal of Applied Physics, 1989
Preparation, structure, and properties of the superconducting compound series ${Bi}_{2} {Sr}_{2} {Ca}_{n - 1} {Cu}_{n} O_{y}$ with $n = 1, 2, and 3$
Physical Review B, 1988
Reaction Mechanism of Forming the High-T_c Superconductor in the Pb-Bi-Sr-Ca-Cu-O System
Japanese Journal of Applied Physics, 1988
High-T_c Phase Promoted and Stabilized in the Bi, Pb-Sr-Ca-Cu-O System
Japanese Journal of Applied Physics, 1988
Structural Properties of Two Superconducting Phases in the Bi-Sr-Ca-Cu-O System
Japanese Journal of Applied Physics, 1988
A New High-T_c Oxide Superconductor without a Rare Earth Element
Japanese Journal of Applied Physics, 1988
Electronic Properties and Modeling of Lattice-Mismatched and Regrown GaAs Interfaces Prepared by Metalorganic Vapor Phase Epitaxy
Japanese Journal of Applied Physics, 1988