Photoconductive generation mechanism and gain in internal photoemission infrared detectors
- 1 April 1998
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (7) , 3923-3925
- https://doi.org/10.1063/1.367141
Abstract
The photoconductivity generation mechanism and photoconductive gain in internal photoemission infrared detectors have been studied. A simple model is proposed and it shows that the photoconductive gain of internal photoemission detectors is less than but close to unity and independent of the number of the emitter layers, while the current responsivity is proportional to the number of emitter layers. The results, in good agreement with the experiments, are contrary to those of quantum-well photodetectors due to the different photocarrier generation mechanisms between the quantum-well photodetectors and internal photoemission detectors.This publication has 13 references indexed in Scilit:
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