Multiple-quantum-well reflection modulator using a lifted-off GaAs/AlGaAs film bonded to gold on silicon

28 March 1991

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 27 (7) , 557-558
https://doi.org/10.1049/el:19910351

Abstract

A normally-off asymmetric Fabry–Perot reflection modulator using a lifted-off GaAs/AlGaAs multiple-quantum-well structure is reported. The 2 μm thick epitaxial layer was bonded to a silicon wafer coated with gold, which served as the rear mirror and as an electrical contact. Modulation ratios of 3.4:1 with 5 V bias and 4.3:1 with 12 V bias were obtained with an insertion loss of 4.3 dB at 12 V.

Keywords

GAAS-ALGAAS-AU-SI
12 V
5 V
2 MICRON
AU MIRROR
PERPENDICULAR GEOMETRY
4.3 DB
ASYMMETRY FABRY-PEROT REFLECTION MODULATOR
SI SUBSTRATE
NORMALLY OFF MODULATOR
MULTIPLE-QUANTUM WELL-STRUCTURE
REFLECTION MODULATOR
MQW REFLECTION MODULATORS
SEMICONDUCTORS
LIFTED-OFF FILMS
OPTICAL INTERCONNECT
INSERTION LOSS
AU ELECTRICAL CONTACT
GAAS ON SI

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