Improvement of GaN-based laser diode facets by FIBpolishing
- 25 June 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (13) , 1315-1316
- https://doi.org/10.1049/el:19980886
Abstract
420 nm metal organic chemical vapour deposition-grown laser diodes were fabricated using Cl2 reactive ion etching to form the facet mirrors. The diodes were subsequently tested under pulsed conditions before and after focused ion beam (FIB) polishing. Ith was reduced from 1.75 to 1.08 A and the differential quantum efficiency (ηd) increased from 1.3% to 2.5% after FIB.Keywords
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