The determination of grain-boundary recombination rates by scanned spot excitation methods
- 1 August 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (8) , 5968-5971
- https://doi.org/10.1063/1.331389
Abstract
Laser‐ and electron‐beam induced‐current techniques have been used to determine minority carrier diffusion lengths and grain‐boundary recombination velocities in polycrystalline silicon. Data obtained on a variety of grain boundaries appear to be in good agreement with the recent calculations by Zook.This publication has 8 references indexed in Scilit:
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