Laser annealed ohmic contact to n+-GaAs

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Abstract
Ohmic contacts were made on n+-GaAs substrates by evaporating a gold–germanium eutectic film with or without a thin nickel overlayer and then alloying these samples either in a furnace or by means of an excimer laser. It is found that laser annealing gives a better surface morphology and a lower contact resistance than furnace annealing.

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