Electrical evaluation of high-temperature effects on gate oxide integrity in a self-aligned CoSi2 MOS process
- 1 November 1993
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 73, 277-279
- https://doi.org/10.1016/0169-4332(93)90179-f
Abstract
No abstract availableKeywords
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- Recrystallization and grain growth phenomena in polycrystalline Si/CoSi2 thin-film couplesJournal of Applied Physics, 1990
- A self-aligned cobalt silicide technology using rapid thermal processingJournal of Vacuum Science & Technology B, 1986