Transport Properties of Nondegenerate-Type Semiconductors Considering Electron-Electron Scattering
- 1 May 1959
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 114 (3) , 717-718
- https://doi.org/10.1103/physrev.114.717
Abstract
Sodha and Eastman have shown that the time of relaxation of an electron due to scattering by ions and electrons is given by , where is proportional to its velocity and a function tabulated by Spitzer and Härm. In this paper the authors have proposed two analytical functions for which make the integrals appearing in transport theory readily integrable.
Keywords
This publication has 4 references indexed in Scilit:
- Transport phenomena in nondegenerate semiconductors considering electron-electron scatteringThe European Physical Journal A, 1959
- Mobility of electrons in nondegenerate semiconductors considering electron-electron scatteringThe European Physical Journal A, 1958
- Effect of Electron-Electron Scattering on Hall Mobility of Electrons in n SemiconductorsProgress of Theoretical Physics, 1958
- Transport Phenomena in a Completely Ionized GasPhysical Review B, 1953