Transient and persistent photoconductivity in n-AlxGa1-xAs and selectively doped n-AlxGa1-xAs/GaAs heterostructures
- 30 March 1985
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 18 (9) , L215-L221
- https://doi.org/10.1088/0022-3719/18/9/007
Abstract
The peculiar electrical properties of n-AlxGa1-xAs:Si with 0.20xGa1-As. The band diagram in real space is calculated for selectively doped heterostructures in terms of the two-donor model. The design parameters for selectively doped heterostructures are discussed on the basis of this calculation and some design rules are proposed.Keywords
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