Transient and persistent photoconductivity in n-AlxGa1-xAs and selectively doped n-AlxGa1-xAs/GaAs heterostructures

Abstract
The peculiar electrical properties of n-AlxGa1-xAs:Si with 0.20xGa1-As. The band diagram in real space is calculated for selectively doped heterostructures in terms of the two-donor model. The design parameters for selectively doped heterostructures are discussed on the basis of this calculation and some design rules are proposed.
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