Pulsed Laser-Induced Amorphization of Polycrystalline Silicon Film
- 1 April 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (4A) , L548
- https://doi.org/10.1143/jjap.29.l548
Abstract
A 20 nm-thick polycrystalline silicon film was completely amorphized through laser-induced melt-regrowth using a 30 ns XeCl excimer laser pulse at an energy density of over 240 mJ/cm2. Moreover, the amorphized silicon was recrystallized by irradiation by a single pulse at an energy density below 240 mJ/cm2. The transition from the amorphous to the crystalline state was reversible and governed by the laser energy density. The laser-induced amorphized film had a low optical band gap of 1.4 eV. Its electrical conductivity was characterized by variable-range hopping.Keywords
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