An analysis of distortion in bipolar transistors using integral charge control model and Volterra series
- 1 July 1973
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Circuit Theory
- Vol. 20 (4) , 341-351
- https://doi.org/10.1109/tct.1973.1083708
Abstract
A new analysis approach to understand and minimize nonlinear distortion in bipolar transistors is presented. It employs a recently developed nonlinear device model, known as the integral charge control model, and a powerful analysis tool: the Volterra series representation. The salient analytical features of this paper are: a simple representation of the Volterra transfer functions of the transistor, compact expressions for frequency-dependent distortion coefficients, and physically meaningful asymptotic low- and high-frequency distortion coefficients. The analytical results have been experimentally verified. Finally, specific design examples are furnished to illustrate the powerful nature of the above analytical expressions.Keywords
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