Microstructure of silicon-on-insulator structures produced by high dose nitrogen implantation of silicon
- 1 November 1986
- Vol. 36 (11-12) , 925-928
- https://doi.org/10.1016/0042-207x(86)90142-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Formation mechanism and structures of buried oxy-nitride layers produced by ion beam synthesisVacuum, 1986
- Transmission electron microscopy and Auger electron spectroscopy of silicon-on-insulator structures prepared by high-dose implantation of nitrogenJournal of Applied Physics, 1985
- Formation of Silicon‐on‐Insulator Structures by Implanted NitrogenJournal of the Electrochemical Society, 1985
- High quality silicon on insulator structures formed by the thermal redistribution of implanted nitrogenApplied Physics Letters, 1985